SODIMM Notebook Memory Kingston 4GB CL19 DDR4 2666MHz 1.2V

FEATURES
– Power Supply: VDD = 1.2V Typical
– VDDQ = 1.2V Typical
– VPP = 2.5V Typical
– VDDSPD = 2.2V to 3.6V
– Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
– Low-power auto self refresh (LPASR)
– Data bus inversion (DBI) for data bus
– On-die VREFDQ generation and calibration
– Single-rank
– On-board I2 serial presence-detect (SPD) EEPROM
– 16 internal banks; 4 groups of 4 banks each
– Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
– Selectable BC4 or BL8 on-the-fly (OTF)
– Fly-by topology
– Terminated control command and address bus
– PCB: Height 1.18” (30.00mm)
– RoHS Compliant and Halogen-Free
SPECIFICATIONS
– CL (IDD): 19 cycles
– Row Cycle Time (tRCmin): 45.75ns (min.)
– Refresh to Active/Refresh
– Command Time (tRFCmin): 350ns (min.)
– Row Active Time (tRASmin): 32ns (min.)
– Maximum Operating Power: TBD W*
– UL Rating: 94V – 0
– Operating Temperature: 0o C to +85o C
– Storage Temperature: -55o C to +100o C