SODIMM Notebook Memory Kingston 4GB CL11 DDR3 1600MHz Low Voltage

SPECIFICATIONS
– CL (IDD) 11 cycles
– Row Cycle Time (tRCmin) 48.125ns (min.)
– Refresh to Active/Refresh 260ns (min.)
– Command Time (tRFCmin)
– Row Active Time (tRASmin) 35ns (min.)
– Maximum Operating Power (1.35V) = 2.376 W*
– UL Rating 94V – 0
FEATURES
– JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
– VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
– 800MHz fCK for 1600Mb/sec/pin
– 8 independent internal bank
– Programmable CAS Latency: 11, 10, 9, 8, 7, 6
– Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
– 8-bit pre-fetch
– Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
– Bi-directional Differential Data Strobe
– Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
– On Die Termination using ODT pin
– Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
– Asynchronous Reset
– PCB: Height 1.18” (30mm), double sided component